RE: [fluka-discuss]: Regarding DPA and NIEL in GaN

From: Vasilis Vlachoudis <Vasilis.Vlachoudis_at_cern.ch>
Date: Fri, 9 Sep 2016 07:30:03 +0000

Dear Shyan,

the damage threshold is a property is the minimum average energy in all crystallographic directions
to induce a displacement. So it is a property of the material GaN and FLUKA cannot calculate it
from the lattice structure.
You have to search in the literature if you can find the damage threshold for the compound GaN.


Cheers
Vasilis

________________________________________
From: owner-fluka-discuss_at_mi.infn.it [owner-fluka-discuss_at_mi.infn.it] on behalf of Shyam Kumar [shyam.dei_at_iitb.ac.in]
Sent: Thursday, September 08, 2016 05:58
To: fluka-discuss_at_fluka.org
Subject: [fluka-discuss]: Regarding DPA and NIEL in GaN

Dear Fluka Experts,
                    I am trying to check the DPA and NIEL for GaN
(compound semiconductor) for that I have defined the
material. Ga and N has different threshold atomic
displacement energies, i have shown in the image.
Since GaN has different structure as (100) and (111),
Is there any way to take care of that in simulation?



Thanks and Regards
Shyam

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Received on Fri Sep 09 2016 - 11:07:40 CEST

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