[fluka-discuss]: Regarding DPA and NIEL in GaN

From: Shyam Kumar <shyam.dei_at_iitb.ac.in>
Date: Thu, 8 Sep 2016 09:28:02 +0530

Dear Fluka Experts,
                    I am trying to check the DPA and NIEL for GaN
(compound semiconductor) for that I have defined the
material. Ga and N has different threshold atomic
displacement energies, i have shown in the image.
Since GaN has different structure as (100) and (111),
Is there any way to take care of that in simulation?



Thanks and Regards
Shyam



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gan.png
(image/png attachment: gan.png)

Received on Thu Sep 08 2016 - 07:43:50 CEST

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