Dear Fluka Experts,
I am trying to check the DPA and NIEL for GaN
(compound semiconductor) for that I have defined the
material. Ga and N has different threshold atomic
displacement energies, i have shown in the image.
Since GaN has different structure as (100) and (111),
Is there any way to take care of that in simulation?
Thanks and Regards
Shyam
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Received on Thu Sep 08 2016 - 07:43:50 CEST