From: Shyam Kumar <shyam.dei_at_iitb.ac.in>
Date: Fri, 9 Sep 2016 16:50:49 +0530
Dear Vasilis,
Thank You for reply, I have checked the Atomic threshold
energy, from the paper attached, It says in GaN, the average
Ed value for gallium and nitrogen atoms is estimated to be
73.2 and 32.4 eV, respectively (in conclusion). So I have
supplied different Ed for Ga atom and N atom. Is it correct
the way I have defined GaN (image attached)?
Regards
Shyam
> Dear Shyan,
>
> the damage threshold is a property is the minimum average energy in all
> crystallographic directions
> to induce a displacement. So it is a property of the material GaN and
> FLUKA cannot calculate it
> from the lattice structure.
> You have to search in the literature if you can find the damage threshold
> for the compound GaN.
>
>
> Cheers
> Vasilis
>
> ________________________________________
> From: owner-fluka-discuss_at_mi.infn.it [owner-fluka-discuss_at_mi.infn.it] on
> behalf of Shyam Kumar [shyam.dei_at_iitb.ac.in]
> Sent: Thursday, September 08, 2016 05:58
> To: fluka-discuss_at_fluka.org
> Subject: [fluka-discuss]: Regarding DPA and NIEL in GaN
>
> Dear Fluka Experts,
> I am trying to check the DPA and NIEL for GaN
> (compound semiconductor) for that I have defined the
> material. Ga and N has different threshold atomic
> displacement energies, i have shown in the image.
> Since GaN has different structure as (100) and (111),
> Is there any way to take care of that in simulation?
>
>
>
> Thanks and Regards
> Shyam
>
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>
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Received on Fri Sep 09 2016 - 15:46:30 CEST
