RE: [fluka-discuss]: Regarding DPA and NIEL in GaN

From: Shyam Kumar <shyam.dei_at_iitb.ac.in>
Date: Tue, 13 Sep 2016 08:36:51 +0530

 Dear Vasilis,
             Thank you, I will use the average value in the Material
properties card suggested for GaN.

Regards
Shyam




> Hi Shyam,
>
> The paper gives the Ed for the directions of Ga or N in the crystal of
> GaN.
> In FLUKA the materials are treated as amorphous, and the Ed it has to be
> provided for the materials assigned to regions (not to their components).
> In this case you have to use one MAT-PROP card for GaN giving
> the average Ed for all crystallographic directions. Unfortunately this is
> not given in the paper, so as I first guess I would use the average value
> of the two.
>
> Regards
> Vasilis
>
> ________________________________________
> From: Shyam Kumar [shyam.dei_at_iitb.ac.in]
> Sent: Friday, September 09, 2016 13:20
> To: Vasilis Vlachoudis
> Cc: Shyam Kumar; fluka-discuss_at_fluka.org
> Subject: RE: [fluka-discuss]: Regarding DPA and NIEL in GaN
>
> Dear Vasilis,
> Thank You for reply, I have checked the Atomic threshold
> energy, from the paper attached, It says in GaN, the average
> Ed value for gallium and nitrogen atoms is estimated to be
> 73.2 and 32.4 eV, respectively (in conclusion). So I have
> supplied different Ed for Ga atom and N atom. Is it correct
> the way I have defined GaN (image attached)?
>
> Regards
> Shyam
>
>
>> Dear Shyan,
>>
>> the damage threshold is a property is the minimum average energy in all
>> crystallographic directions
>> to induce a displacement. So it is a property of the material GaN and
>> FLUKA cannot calculate it
>> from the lattice structure.
>> You have to search in the literature if you can find the damage
>> threshold
>> for the compound GaN.
>>
>>
>> Cheers
>> Vasilis
>>
>> ________________________________________
>> From: owner-fluka-discuss_at_mi.infn.it [owner-fluka-discuss_at_mi.infn.it] on
>> behalf of Shyam Kumar [shyam.dei_at_iitb.ac.in]
>> Sent: Thursday, September 08, 2016 05:58
>> To: fluka-discuss_at_fluka.org
>> Subject: [fluka-discuss]: Regarding DPA and NIEL in GaN
>>
>> Dear Fluka Experts,
>> I am trying to check the DPA and NIEL for GaN
>> (compound semiconductor) for that I have defined the
>> material. Ga and N has different threshold atomic
>> displacement energies, i have shown in the image.
>> Since GaN has different structure as (100) and (111),
>> Is there any way to take care of that in simulation?
>>
>>
>>
>> Thanks and Regards
>> Shyam
>>
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>
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Received on Tue Sep 13 2016 - 06:25:21 CEST

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